Smart bias controller design for HEMT amplifier for use in jamming applications.

This thesis presents the simulation and creation of a bias controller for a GaN RF amplifier. GaN RF amplifiers are known for their high efficiency and versatility, making them suitable for a variety of applications, including jamming. However, a key challenge with these devices is that they can burn out if not powered correctly. The bias controller presented in this thesis addresses this issue by providing a precise sequence of power to the gate and drain of the GaN amplifier.
The bias controller was designed and simulated to ensure that the GaN amplifier operates within its safe operating conditions. The results of the simulation were validated through the creation of a physical PCB, which was tested and verified to function as expected. The implementation of the bias controller led to increased reliability and efficiency for the GaN RF amplifier.
The key contribution of this thesis is the development of a new and effective solution for powering GaN RF amplifiers. The simulation and physical implementation demonstrate the viability of the bias controller and its potential impact on future development and applications in electronics and RF amplification. The research in this thesis highlights the importance of proper power sequencing for GaN RF amplifiers and provides a new and innovative approach for ensuring their reliability and performance.